High Efficiency Electron Mobility 12W 28V DC-8.5GHz GaN RF Power Amplifier Transistor Integrated Chip
Product Details
| Product Name: | Power Amplifier | Freq(GHz): | DC-8.5GHz |
|---|---|---|---|
| Pout: | 12W | Character: | High Power |
| Voltage: | 28V | Package: | Plastic DFN-6L 4mm*4.5mm |
| Highlight |
12W GaN RF power amplifier,28V DC GaN transistor chip,8.5GHz RF power amplifier |
||
Product Description
Innotion's YP801241T is a 12-watt, pre-matched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 8500MHz. The transistor is supplied in a plastic DFN-6L 4mm*4.5mm package.
| Signal Bandwidth | DC-8.5GHz |
|---|---|
| Output Power | 12W |
| Voltage | 28V |
| Package | DFN-6L 4mm*4.5mm package |
Located in Suzhou Industrial Park and founded in 2010, we are the only official shop for our products. We sell our own manufactured products at competitive prices, including:
- WiFi amplifiers
- VCOs
- Sweep signal sources
- Wireless card groups
- Other product lines
Our philosophy is that professional people do professional things. We have mastered core technologies in our product field and hold numerous independent intellectual property rights.
Our products are sold throughout domestic markets and are popular with international customers in countries including Russia, the United States, South Korea, Vietnam, and Sweden.
We stand by our commitment to ensure first-class customer service and support for all our products.
Product Highlights
High Efficiency Electron Mobility 12W 28V DC-8.5GHz GaN RF Power Amplifier Transistor Integrated Chip Innotion's YP801241T is a 12-watt, pre-matched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities ...
50W 28V Rf Power Amplifier High Power Wifi Booster Optimized For 700MHz-2100MHz
SZHUASHI 100% New WIFI REPEATER 50W 28V Gain Power Amplifier PA Optimized for 700MHz-2100MHz YPM07211050M Product Description YPM07211050M s a 50-watt, internally 50ohm matched GaN HEMT, designed specifically with high efficiency, high stability and wide bandwidth capabilities, which makes the ...
High Capacitance Varactor Diode Tuning Circuits Variable Capacitance Diode
High Capacitance Ratio Varactor Diode 15V Reverse Current for SZHUASHI Standard Package in Class1B ESD Human Body Model Product Description Mark: D3 PN:YVC024P034RD High capacitance ratio: C0v/C5v=3.4 (typ.) Low series resistance for low phase noise Designed for high volume commercial applications ...
InGaP HBT MMIC 50 to 4000MHz Gain Block IC Wifi Power Amplifier
SZHUASHI 100% New YG602020 InGaP HBT MMIC Gain Block Amplifier Operating Frequency 50MHz to 4000MHz Product Description The YG602020 is a high performance InGaP HBT MMIC gain block amplifier utilizing a Darlington pair configuration with an active bias network. The active bias network provides ...
10W 840-940MHz Anti Drone Jammer GSM/CDMA Wireless Signal Shielding Module
SZHUASHI 100% New RF Blocker Series 10W 840MHz-940MHz GSM/CDMA Jammer Wireless Signal Shielding Module UAV Anti Drone Blocker Product Description YJM0910B is a wireless signal shielding module dedicated to 840-940MHz signal. This module has the advantages of high average output power, good in band ...
Please use our online inquiry contact form below if you have any questions, our team will get back to you as soon as possible.
