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Home > Products > Signal Power Amplifier > High Efficiency Electron Mobility 12W 28V DC-8.5GHz GaN RF Power Amplifier Transistor Integrated Chip
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Signal Jammer Module

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Signal Jammer PCB

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Signal Power Amplifier

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Signal Booster

(36)

Voltage Controlled Oscillator

(78)

Gain Block

(9)

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High Efficiency Electron Mobility 12W 28V DC-8.5GHz GaN RF Power Amplifier Transistor Integrated Chip
High Efficiency Electron Mobility 12W 28V DC-8.5GHz GaN RF Power Amplifier Transistor Integrated Chip
High Efficiency Electron Mobility 12W 28V DC-8.5GHz GaN RF Power Amplifier Transistor Integrated Chip
High Efficiency Electron Mobility 12W 28V DC-8.5GHz GaN RF Power Amplifier Transistor Integrated Chip
High Efficiency Electron Mobility 12W 28V DC-8.5GHz GaN RF Power Amplifier Transistor Integrated Chip

High Efficiency Electron Mobility 12W 28V DC-8.5GHz GaN RF Power Amplifier Transistor Integrated Chip

Product Details

Place of Origin: Jiangsu, China

Brand Name: INNOTION

Model Number: YP801241T

Payment & Shipping Terms

Minimum Order Quantity: 10pcs

Price: 5.9USD each

Packaging Details: Carton

Delivery Time: 1-3 days

Payment Terms: T/T

Supply Ability: 100000pcs/month

Get Best Price

Product Details

Product Description
Highlight:

12W GaN RF power amplifier

,

28V DC GaN transistor chip

,

8.5GHz RF power amplifier

Product Name:
Power Amplifier
Freq(GHz):
DC-8.5GHz
Pout:
12W
Character:
High Power
Voltage:
28V
Package:
Plastic DFN-6L 4mm*4.5mm
Product Name:
Power Amplifier
Freq(GHz):
DC-8.5GHz
Pout:
12W
Character:
High Power
Voltage:
28V
Package:
Plastic DFN-6L 4mm*4.5mm
High Efficiency Electron Mobility 12W 28V DC-8.5GHz GaN RF Power Amplifier Transistor Integrated Chip
High Efficiency Electron Mobility 12W 28V DC-8.5GHz GaN RF Power Amplifier Transistor Integrated Chip

Innotion's YP801241T is a 12-watt, pre-matched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 8500MHz. The transistor is supplied in a plastic DFN-6L 4mm*4.5mm package.

Product Specifications
Signal Bandwidth DC-8.5GHz
Output Power 12W
Voltage 28V
Package DFN-6L 4mm*4.5mm package
YP801241T GaN RF Power Amplifier Transistor
Technical specifications and performance data for YP801241T transistor
Company Information

Located in Suzhou Industrial Park and founded in 2010, we are the only official shop for our products. We sell our own manufactured products at competitive prices, including:

  • WiFi amplifiers
  • VCOs
  • Sweep signal sources
  • Wireless card groups
  • Other product lines

Our philosophy is that professional people do professional things. We have mastered core technologies in our product field and hold numerous independent intellectual property rights.

Our products are sold throughout domestic markets and are popular with international customers in countries including Russia, the United States, South Korea, Vietnam, and Sweden.

Our Services

We stand by our commitment to ensure first-class customer service and support for all our products.

Tags:

rf signal amplifier,

high power wifi booster,

solid state rf amplifier

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Zhongshi Zhihui Technology (suzhou) Co., Ltd.
Products

Signal Jammer Module

Signal Jammer PCB

Signal Power Amplifier

Signal Booster

Voltage Controlled Oscillator

Gain Block

Varactor Diode

sales@sz-huashi.com 86-512-67066119
Room 107, Sanjiang Yuan, 399 Linquan Street, Suzhou Industrial Park, Suzhou City, Jiangsu Province
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