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Latest Company Case About High linearity power amplifier chip YP3035W-H
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High linearity power amplifier chip YP3035W-H

2025-07-04
Latest company case about High linearity power amplifier chip YP3035W-H

High linearity power amplifier chip YP3035W-H

 

The YP3035W-H RF power amplifier chip adopts a number of Innosun Technology's independent patented technologies and advanced InGap/GaAs HBT process, and has high gain and linearity;
An ESD protection unit is integrated inside the chip, which has high reliability.
It adopts a QFN package form that meets industry standards, with a package size of 4mm × 4mm, which is easy to integrate and miniaturize the system.
Main performance indicators:
- Working frequency band: 2000~3000MHz
- Working voltage: 3.3~5.0V
- Gain: 33dB
- Output power: 36dBm@5.0V
- Quiescent current: 250mA
- Input return loss: >15dB
- Internal integrated power detection unit
- Internal integrated ESD protection unit
- Packaging form: QFN-16L 4mm × 4mm
- Working temperature: -40℃~85℃

 

Application areas:
-2.4GHz Internet of Things
-IEEE 802.11b/g/n/ac wireless local area network
- High-end wireless network card, wireless AP
-LTE
-Wibro 2.3GHz to 2.4GHz
-WiMAX 2.5GHz to 2.7GHz

 

Zhongshi Zhihui Technology (suzhou) Co., Ltd.
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Signal Jammer Module

Signal Jammer PCB

Signal Power Amplifier

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Voltage Controlled Oscillator

Gain Block

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