Cases

Home > Cases >

Latest Company Case About Our company has launched a new high linear power amplifier chip YP3035W-H

Events

Cases

Contacts

Contacts: Ms. Zhou

Tel: 86-512-67066119

Contact Now

Mail Us

Our company has launched a new high linear power amplifier chip YP3035W-H

2025-09-05

The YP3035W-H RF power amplifier chip adopts multiple independent patented technologies of Innolux Technology and advanced InGap/GaAs HBT process technology, with high gain and linearity; The chip integrates an ESD protection unit internally, which has high reliability.
Adopting QFN packaging format that meets industry standards, with a packaging size of 4mmx4mm, it is easy to integrate and miniaturize the system.

Main performance indicators:
- Working frequency band: 2000~3000MHz
- Working voltage: 3.3~5.0V

- Gain: 33dB
- Output power: 36dBm@5.0V

- Static current: 250mA

- Input return loss:>15dB

- Internal integrated power detection unit

- Internal integrated ESD protection unit

- Packaging form: QFN-16L4mmx4mm

- Operating temperature: -40 ℃~85 ℃

Application areas:
- 2.4GHz Internet of Things
- IEEE 802.11b/g/n/ac Wireless Local Area Network
- High end wireless network card, wireless AP
- LTE
- Wibro 2.3GHz to 2.4GHZ
- WiMAX 2.5GHz to 2.7GHZ

Zhongshi Zhihui Technology (suzhou) Co., Ltd.

products

Quick links

Company Profile Factory Tour Quality Control News Cases Sitemap Privacy Policy

News

Cases

Our company has launched a new high linear power amplifier chip YP3035W-H

Signal Jammer Module

Signal Jammer PCB

Signal Power Amplifier

Signal Booster

Voltage Controlled Oscillator

Gain Block

Varactor Diode