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Home > Products > Signal Power Amplifier > Innotion 20W 6000MHz High Efficiency GaN HEMT RF Power Transistor Amplifier IC
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Signal Jammer Module

(106)

Signal Jammer PCB

(67)

Signal Power Amplifier

(86)

Signal Booster

(33)

Voltage Controlled Oscillator

(78)

Gain Block

(9)

Varactor Diode

(4)

Wireless USB Adapter

(2)
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Innotion 20W 6000MHz High Efficiency GaN HEMT RF Power Transistor Amplifier IC
Innotion 20W 6000MHz High Efficiency GaN HEMT RF Power Transistor Amplifier IC
Innotion 20W 6000MHz High Efficiency GaN HEMT RF Power Transistor Amplifier IC
Innotion 20W 6000MHz High Efficiency GaN HEMT RF Power Transistor Amplifier IC
Innotion 20W 6000MHz High Efficiency GaN HEMT RF Power Transistor Amplifier IC

Innotion 20W 6000MHz High Efficiency GaN HEMT RF Power Transistor Amplifier IC

Product Details

Place of Origin: Jiangsu，China

Brand Name: SZHUASHI

Model Number: YP601820T

Payment & Shipping Terms

Minimum Order Quantity: 2 PCS

Price: 20USD each

Packaging Details: Carton

Delivery Time: 2-7days

Payment Terms: T/T

Supply Ability: 10000pcs/ month

Get Best Price

Product Details

Product Description
Highlight:
Product Name:
RF Power Transistor
Pout:
20W
Frequency:
6000MHz
Feature:
High Efficiency
Product Name:
RF Power Transistor
Pout:
20W
Frequency:
6000MHz
Feature:
High Efficiency
Innotion 20W 6000MHz High Efficiency GaN HEMT RF Power Transistor Amplifier IC

Innotion High Efficiency 20W Gallium Nitride 28V DC-6GHz 20W RF Power Transistor


Product Description

Innotion’s YP601820T is a 20-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 6000MHz. The transistor is supplied in a ceramic /metal flange package.

 

Pout 20W
Frequency 6000MHz
 
Features
  • High Efficiency and Linear Gain Operation
  • Negative Gate Voltage and Bias Sequencing Required
  • Excellent Thermal Stability and Excellent Ruggedness
  • Metal Based Package Sealed with Ceramic-Epoxy Lid
  • Gold Metallization System: Chip-Wire Bond-Package



Innotion 20W 6000MHz High Efficiency GaN HEMT RF Power Transistor Amplifier IC 0

Innotion 20W 6000MHz High Efficiency GaN HEMT RF Power Transistor Amplifier IC 1Innotion 20W 6000MHz High Efficiency GaN HEMT RF Power Transistor Amplifier IC 2

 

Innotion 20W 6000MHz High Efficiency GaN HEMT RF Power Transistor Amplifier IC 3

Innotion 20W 6000MHz High Efficiency GaN HEMT RF Power Transistor Amplifier IC 4

Company Information

Suzhou Industrial Park. Founded in 2010. The only official shop! We sell our own products at the best price, such as WiFi amplifier, VCO, sweep signal source, wireless card group and other product lines;
Professional people do professional things. We have mastered some core technologies in the product field and have a number of independent intellectual property rights.
Our products have been sold to many domestic cities, but also very popular with many foreign customers, such as Russia, the United States, South Korea, Vietnam, Sweden and so on.

Our Services

 We stand by our commitment to ensure first class customer service.


Tags:

rf signal amplifier,

high power wifi booster,

solid state rf amplifier

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Zhongshi Zhihui Technology (suzhou) Co., Ltd.
Products

Signal Jammer Module

Signal Jammer PCB

Signal Power Amplifier

Signal Booster

Voltage Controlled Oscillator

Gain Block

Varactor Diode

sales@sz-huashi.com 86-512-67066119
Room 107, Sanjiang Yuan, 399 Linquan Street, Suzhou Industrial Park, Suzhou City, Jiangsu Province
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