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28V DC-8.5GHz 12W GaN RF Power Amplifier Transistor Integrated Chip

제품 세부 정보

원래 장소: 중국 장쑤성

브랜드 이름: INNOTION

모델 번호: YP801241T

지불 및 배송 조건

최소 주문 수량: 10PCS

가격: 5.9USD each

포장 세부 사항: 판지 상자

배달 시간: 1~3일

지불 조건: 티/티

공급 능력: 100000pcs/월

최고의 가격을 얻으십시오
강조하다:
제품명:
전력 증폭기
주파수(GHz):
DC-8.5GHz
입을 삐죽거리기:
12W
성격:
고전력
제품명:
전력 증폭기
주파수(GHz):
DC-8.5GHz
입을 삐죽거리기:
12W
성격:
고전력
28V DC-8.5GHz 12W GaN RF Power Amplifier Transistor Integrated Chip
Factory Supply 100% New PA 28V DC-8.5GHz 12W GaN RF Amplifier Transistor
Innotion’s YP801241T is a 12-watt, pre-matched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 8500MHz. The transistor is supplied in a plastic DFN-6L 4mm*4.5mm package.
Product Specifications
Signal Bandwidth DC-8.5GHz
Output Power 12W
Voltage 28V
Package DFN-6L 4mm*4.5mm package
28V DC-8.5GHz 12W GaN RF Power Amplifier Transistor Integrated Chip 0
28V DC-8.5GHz 12W GaN RF Power Amplifier Transistor Integrated Chip 1
Company Information

Located in Suzhou Industrial Park and founded in 2010, we are the only official shop for our products. We sell our own manufactured products at competitive prices, including WiFi amplifiers, VCOs, sweep signal sources, wireless card groups, and other product lines.

Our philosophy is that professional people do professional things. We have mastered core technologies in our product field and hold numerous independent intellectual property rights.

Our products are sold throughout domestic markets and are popular with international customers in countries including Russia, the United States, South Korea, Vietnam, and Sweden.

Our Services
We stand by our commitment to ensure first-class customer service and support for all our products.