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家へ > 製品 > シグナルパワーアンプ > 28V DC-8.5GHz 12W GaN RF Power Amplifier Transistor Integrated Chip

28V DC-8.5GHz 12W GaN RF Power Amplifier Transistor Integrated Chip

製品詳細

起源の場所: 江蘇省、中国

ブランド名: INNOTION

モデル番号: YP801241T

支払いと送料の条件

最小注文数量: 10個

価格: 5.9USD each

パッケージの詳細: カートン

受渡し時間: 1~3日

支払条件: T/T

供給の能力: 100000個/月

お問い合わせ
ハイライト:
製品名:
電力増幅器
周波数(GHz):
DC-8.5GHz
ふくれっ面:
12W
キャラクター:
高電力
製品名:
電力増幅器
周波数(GHz):
DC-8.5GHz
ふくれっ面:
12W
キャラクター:
高電力
28V DC-8.5GHz 12W GaN RF Power Amplifier Transistor Integrated Chip
Factory Supply 100% New PA 28V DC-8.5GHz 12W GaN RF Amplifier Transistor
Innotion’s YP801241T is a 12-watt, pre-matched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 8500MHz. The transistor is supplied in a plastic DFN-6L 4mm*4.5mm package.
Product Specifications
Signal Bandwidth DC-8.5GHz
Output Power 12W
Voltage 28V
Package DFN-6L 4mm*4.5mm package
28V DC-8.5GHz 12W GaN RF Power Amplifier Transistor Integrated Chip 0
28V DC-8.5GHz 12W GaN RF Power Amplifier Transistor Integrated Chip 1
Company Information

Located in Suzhou Industrial Park and founded in 2010, we are the only official shop for our products. We sell our own manufactured products at competitive prices, including WiFi amplifiers, VCOs, sweep signal sources, wireless card groups, and other product lines.

Our philosophy is that professional people do professional things. We have mastered core technologies in our product field and hold numerous independent intellectual property rights.

Our products are sold throughout domestic markets and are popular with international customers in countries including Russia, the United States, South Korea, Vietnam, and Sweden.

Our Services
We stand by our commitment to ensure first-class customer service and support for all our products.