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Home > products > Signal Power Amplifier > 50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GAN RF Power Transistor

50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GAN RF Power Transistor

Product Details

Place of Origin: Jiangsu, China

Brand Name: INNOTION

Model Number: YP01401650T

Payment & Shipping Terms

Price: Prices are negotiable

Packaging Details: Carton

Delivery Time: 5-8work days

Get Best Price
Highlight:

50W GAN RF Power Transistor

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28V GAN RF Power Transistor

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4GHz GAN RF Power Transistor

50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GAN RF Power Transistor

 INNOTION YP01401650T 50W Gallium Nitride 28V DC-4GHz High Electron Mobility GAN RF Power Transistor

 

Product Description

Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor is supplied in a ceramic /metal flange package.

 

Votage 28V
Pout 50W
 
 
Features:
High Efficiency and Linear Gain Operation
Negative Gate Voltage and Bias Sequencing Required
Excellent Thermal Stability and Excellent Ruggedness
Metal Based Package Sealed with Ceramic-Epoxy Lid
Gold Metallization System: Chip-Wire Bond-Package
 
 
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Company Information

Suzhou Industrial Park. Founded in 2010. The only official shop! We sell our own products at the best price, such as WiFi amplifier, VCO, sweep signal source, wireless card group and other product lines;
Professional people do professional things. We have mastered some core technologies in the product field and have a number of independent intellectual property rights.
Our products have been sold to many domestic cities, but also very popular with many foreign customers, such as Russia, the United States, South Korea, Vietnam, Sweden and so on.

 

Our Services

We stand by our commitment to ensure first class customer service.